Œค‹†Žา๎•๑•\Žฆ   ŒŸ๕ƒgƒbƒv

‹ณˆ็EŒค‹†‹ฦั
“์@“เŽkiƒ~ƒiƒ~@ƒ^ƒ_ƒcƒO^MINAMI TADATSUGUj

‹ฦั‹ๆ•ช ŠwpŽGŽ˜_•ถ | Šw‰๏ŽE๊–ๅŽŠwp˜_•ถiƒtƒ‹ƒy[ƒp[j

ƒ^ƒCƒgƒ‹ “๚–{Œ๊  
‰pŒ๊ Electron scattering from disordered grain boundaries in degenerate polycrystalline
Al-doped ZnO thin films
’˜Žา ‹ค’˜

 Ž–ผ–๐Š„
1“๚–{Œ๊“์@“เŽk 
‰pŒ๊MINAMI TADATSUGU 
2“๚–{Œ๊‹{“c@rO 
‰pŒ๊MIYATA TOSHIHIRO 
3“๚–{Œ๊๚บ‰i@_Œศ 
‰pŒ๊TOKUNAGA HIROKI 

 
Ž–ผ “๚–{Œ๊  
‰pŒ๊ Phys. Status Solidi A
  Vol.216, No.5, pp.1700783-1 - 1700783-9
o”ลŽา “๚–{Œ๊  
‰pŒ๊ WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
o”ล”NŒŽ 2019”N
Œค‹†”อˆอ Š๎‘b“IŒค‹†
ธ“ว‚ฬ—L–ณ ŒตŠi‚ศธ“ว
ต‘า‚ฬ—L–ณ ’สํ˜_•ถ
‹LqŒพŒ๊ ‰pŒ๊
Œfฺ‹ๆ•ช ŠCŠO
ŒfฺŽํ•ส Œค‹†˜_•ถiŠwpŽGŽj
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ŠT—v “๚–{Œ๊  
‰pŒ๊ This paper describes the influence of electron scattering from disordered grain boundaries on the carrier transport in polycrystalline Al-doped ZnO (AZO) thin films prepared with electron concentrations on the order of 1020 cm-3. The main scattering mechanism, which limits the carrier transport in AZO thin films, is attributed to grain boundary scattering caused by the reflection of electrons from the potential barrier at the grain boundary between crystallites. The positively sloped mobility-electron concentration relationship is attributed to Anderson localization.
ƒL[ƒ[ƒh “๚–{Œ๊ ‰pŒ๊