Electron scattering from disordered grain boundaries in degenerate polycrystalline
Al-doped ZnO thin films
Phys. Status Solidi A
Vol.216, No.5, pp.1700783-1 - 1700783-9
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
This paper describes the influence of electron scattering from disordered grain boundaries on the carrier transport in polycrystalline Al-doped ZnO (AZO) thin films prepared with electron concentrations on the order of 1020 cm-3. The main scattering mechanism, which limits the carrier transport in AZO thin films, is attributed to grain boundary scattering caused by the reflection of electrons from the potential barrier at the grain boundary between crystallites. The positively sloped mobility-electron concentration relationship is attributed to Anderson localization.